5 October 2017 GaN laser diodes for quantum technologies
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Abstract
GaN laser diodes has the potential to be a key enabling technology for a range of quantum technologies, including next generation optical atomic clocks and gravity sensors, based on cold-atom interferometry and also quantum communications, that have important applications for security and defence. Presently, such systems require a number of expensive, sophisticated and complex laser sources that limit quantum technologies to the laboratory. In contrast, GaN laser diode technology has the potential to provide a compact, rugged and reliable solutions, suitable for commercialisation. We report our latest results of GaN laser diodes suitable for both cold-atom interferometry and quantum communications.
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S. P. Najda, S. P. Najda, P. Perlin, P. Perlin, T. Suski, T. Suski, L. Marona, L. Marona, S. Stanczyk, S. Stanczyk, M. Leszczyński, M. Leszczyński, P. Wisniewski, P. Wisniewski, R. Czernecki, R. Czernecki, D. Schiavon, D. Schiavon, } "GaN laser diodes for quantum technologies", Proc. SPIE 10442, Quantum Information Science and Technology III, 104420N (5 October 2017); doi: 10.1117/12.2277001; https://doi.org/10.1117/12.2277001
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