5 October 2017 GaN laser diodes for quantum technologies
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GaN laser diodes has the potential to be a key enabling technology for a range of quantum technologies, including next generation optical atomic clocks and gravity sensors, based on cold-atom interferometry and also quantum communications, that have important applications for security and defence. Presently, such systems require a number of expensive, sophisticated and complex laser sources that limit quantum technologies to the laboratory. In contrast, GaN laser diode technology has the potential to provide a compact, rugged and reliable solutions, suitable for commercialisation. We report our latest results of GaN laser diodes suitable for both cold-atom interferometry and quantum communications.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. P. Najda, S. P. Najda, P. Perlin, P. Perlin, T. Suski, T. Suski, L. Marona, L. Marona, S. Stanczyk, S. Stanczyk, M. Leszczyński, M. Leszczyński, P. Wisniewski, P. Wisniewski, R. Czernecki, R. Czernecki, D. Schiavon, D. Schiavon, } "GaN laser diodes for quantum technologies", Proc. SPIE 10442, Quantum Information Science and Technology III, 104420N (5 October 2017); doi: 10.1117/12.2277001; https://doi.org/10.1117/12.2277001

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