7 August 2017 Modeling and simulation of 4H-SiC field effect transistor
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Proceedings Volume 10445, Photonics Applications in Astronomy, Communications, Industry, and High Energy Physics Experiments 2017; 1044558 (2017) https://doi.org/10.1117/12.2280949
Event: Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2017, 2017, Wilga, Poland
Abstract
This paper presents the technological issue of silicon carbide MOSFET design. Through the use of simulations of silicon carbide transistor, the influence of the different the technological parameters are described and discussed. MOSFET transistor was performed in Silvaco TCAD using technology elaborated at Lublin University of Technology. The most important parameters related to ion implantation, which was used in p-i-n photodiode technology. The electrical simulations were performed, transfer and output characteristics for different values of technological parameters were generated – influence of gate oxide thickness on threshold voltage and influence of channel length modulation were checked. The results of simulations as well as transfer and output characteristics allowed to select optimal parameters between expected device working and available technology – gate oxide thickness and transistor channel length were established. This work was in fact carried out to increase our understanding of the device characteristics so as to allow the design of new SiC circuits which could meet the stressful requirements of ultraviolet detector systems.
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A. Pedryc, A. Pedryc, A. Martychowiec, A. Martychowiec, A. Kociubiński, A. Kociubiński, } "Modeling and simulation of 4H-SiC field effect transistor", Proc. SPIE 10445, Photonics Applications in Astronomy, Communications, Industry, and High Energy Physics Experiments 2017, 1044558 (7 August 2017); doi: 10.1117/12.2280949; https://doi.org/10.1117/12.2280949
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