28 September 2017 Multi-beam mask writer MBM-1000
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Proceedings Volume 10446, 33rd European Mask and Lithography Conference; 1044607 (2017) https://doi.org/10.1117/12.2280453
Event: 33rd European Mask and Lithography Conference, 2017, Dresden, Germany
Abstract
Multi-beam mask writer MBM-1000 will be released in Q4 2017 for N5 semiconductor production. The motivation to go to multi-beam is high throughput at aggressive shot count. MBM-1000 performs better than EBM-9500, which is our latest VSB writer, at shot count of 500 G/pass or more because of exposure count and beam current independent to figure count. Key technology for high throughput is cathode and high-voltage power supply which provides large beam emission current, inline data path and blanking aperture array (BAA) with 300 Gbps data ratio. In this paper, design of data path and BAA for MBM-1000 are described.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroshi Matsumoto, Hiroshi Yamashita, Takao Tamura, Kenji Ohtoshi, "Multi-beam mask writer MBM-1000", Proc. SPIE 10446, 33rd European Mask and Lithography Conference, 1044607 (28 September 2017); doi: 10.1117/12.2280453; https://doi.org/10.1117/12.2280453
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