28 September 2017 Contour-based etch modeling enablement: from pattern selection to final verification
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Proceedings Volume 10446, 33rd European Mask and Lithography Conference; 104460M (2017) https://doi.org/10.1117/12.2279694
Event: 33rd European Mask and Lithography Conference, 2017, Dresden, Germany
Abstract
Traditional CD-SEM metrology reaches its limits when measuring complex configurations (e.g. advanced node contact configurations). SEM extracted contours embody valuable information which is essential for building a robust etch prediction model [1, 2]. CDSEM recipe complexity, processing time and measurement robustness can be improved using contour based metrology. However, challenges for measurement pattern selection as well as final model verification arise. In this work, we present the full flow of implementing etch prediction models calibrated and verified with SEM contours into a manufacturing environment.
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Jirka Schatz, François Weisbuch, Andrey Lutich, "Contour-based etch modeling enablement: from pattern selection to final verification", Proc. SPIE 10446, 33rd European Mask and Lithography Conference, 104460M (28 September 2017); doi: 10.1117/12.2279694; https://doi.org/10.1117/12.2279694
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