28 September 2017 Aerial image metrology for OPC modeling and mask qualification
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Proceedings Volume 10446, 33rd European Mask and Lithography Conference; 104460V (2017) https://doi.org/10.1117/12.2281886
Event: 33rd European Mask and Lithography Conference, 2017, Dresden, Germany
Abstract
As nodes become smaller and smaller, the OPC applied to enable these nodes becomes more and more sophisticated. This trend peaks today in curve-linear OPC approaches that are currently starting to appear on the roadmap. With this sophistication of OPC, the mask pattern complexity increases. CD-SEM based mask qualification strategies as they are used today are starting to struggle to provide a precise forecast of the printing behavior of a mask on wafer. An aerial image CD measurement performed on ZEISS Wafer-Level CD system (WLCD) is a complementary approach to mask CD-SEMs to judge the lithographical performance of the mask and its critical production features. The advantage of the aerial image is that it includes all optical effects of the mask such as OPC, SRAF, 3D mask effects, once the image is taken under scanner equivalent illumination conditions. Additionally, it reduces the feature complexity and analyzes the printing relevant CD.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ao Chen, Ao Chen, Yee Mei Foong, Yee Mei Foong, Thomas Thaler, Thomas Thaler, Ute Buttgereit, Ute Buttgereit, Angeline Chung, Angeline Chung, Andrew Burbine, Andrew Burbine, John Sturtevant, John Sturtevant, Chris Clifford, Chris Clifford, Kostas Adam, Kostas Adam, Peter De Bisschop, Peter De Bisschop, } "Aerial image metrology for OPC modeling and mask qualification", Proc. SPIE 10446, 33rd European Mask and Lithography Conference, 104460V (28 September 2017); doi: 10.1117/12.2281886; https://doi.org/10.1117/12.2281886
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