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28 September 2017 Multi-trigger resist for electron beam lithography
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Proceedings Volume 10446, 33rd European Mask and Lithography Conference; 1044608 (2017)
Event: 33rd European Mask and Lithography Conference, 2017, Dresden, Germany
Irresistible Materials is developing a new molecular resist system that demonstrates high-resolution capability based on the Multi-trigger concept. In a Multi-Trigger resist, multiple distinct chemical reactions in chemical amplification process must take place in close proximity simultaneously during resist exposure. Thus, at the edge of a pattern feature, where the density of photo-initiators that drive the chemical reactions is low, the amplification process ceases. This significantly reduces blurring effects and enables much improved resolution and line edge roughness while maintaining the sensitivity advantages of chemical amplification. A series of studies such as enhanced resist crosslinking, elimination of the nucleophilic quencher and the addition of high-Z additives to e-beam resist (as a means to increase sensitivity and modify secondary electron blur) were conducted in order to optimize the performance of this material. The optimized conditions allowed patterning down to 28 nm pitch lines with a dose of 248 μC/cm2 using 100kV e-beam lithography, demonstrating the potential of the concept. Furthermore, it was possible to pattern 26 nm diameter pillars on a 60 nm pitch with dose of 221μC/cm2 with a line edge roughness of 2.3 nm.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Carmen Popescu, Alexandra McClelland, Guy Dawson, John Roth, Dimitrios Kazazis, Yasin Ekinci, Wolfgang Theis, and Alex P. G. Robinson "Multi-trigger resist for electron beam lithography", Proc. SPIE 10446, 33rd European Mask and Lithography Conference, 1044608 (28 September 2017);

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