13 June 2017 Scatterometry for advanced process control in semiconductor device manufacturing
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Proceedings Volume 10449, Fifth International Conference on Optical and Photonics Engineering; 1044916 (2017) https://doi.org/10.1117/12.2270595
Event: Fifth International Conference on Optical and Photonics Engineering, 2017, Singapore, Singapore
Abstract
A concise explanation of spectroscopic scatterometry is presented that is used for modelbased shape metrology of etched features in the production of Memory and Logic semiconductor devices. We also present an angle-resolved scatterometry technique that can measure at high throughput on very small test targets. First measured results are shown that demonstrate the capability on 5×5 μm2 targets.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Arie den Boef, Arie den Boef, Hugo Cramer, Hugo Cramer, Stefan Petra, Stefan Petra, Bastiaan Onne Fagginger Auer, Bastiaan Onne Fagginger Auer, Jolanda Schmetz-Schagen, Jolanda Schmetz-Schagen, Armand Koolen, Armand Koolen, Olaf van Loon, Olaf van Loon, Gudrun de Gersem, Gudrun de Gersem, Pieter Klandermans, Pieter Klandermans, Eric Bakker, Eric Bakker, } "Scatterometry for advanced process control in semiconductor device manufacturing", Proc. SPIE 10449, Fifth International Conference on Optical and Photonics Engineering, 1044916 (13 June 2017); doi: 10.1117/12.2270595; https://doi.org/10.1117/12.2270595
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