16 October 2017 Actinic inspection of EUV reticles with arbitrary pattern design
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Abstract
The re ective-mode EUV mask scanning lensless imaging microscope (RESCAN) is being developed to provide actinic mask inspection capabilities for defects and patterns with high resolution and high throughput, for 7 nm node and beyond. Here we, will report on our progress and present the results on programmed defect detection on random, logic-like patterns. The defects we investigated range from 200 nm to 50 nm size on the mask. We demonstrated the ability of RESCAN to detect these defects in die-to-die and die-to-database mode with a high signal to noise ratio. We also describe future plans for the upgrades to increase the resolution, the sensitivity, and the inspection speed of the demo tool.
Conference Presentation
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Iacopo Mochi, Iacopo Mochi, Patrick Helfenstein, Patrick Helfenstein, Rajendran Rajeev, Rajendran Rajeev, Sara Fernandez, Sara Fernandez, Dimitrios Kazazis, Dimitrios Kazazis, Shusuke Yoshitake, Shusuke Yoshitake, Yasin Ekinci, Yasin Ekinci, } "Actinic inspection of EUV reticles with arbitrary pattern design", Proc. SPIE 10450, International Conference on Extreme Ultraviolet Lithography 2017, 1045007 (16 October 2017); doi: 10.1117/12.2280528; https://doi.org/10.1117/12.2280528
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