26 October 2017 EUV source optimization driven by fundamental diffraction considerations
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Illumination Source Optimization is a very fundamental task for the lithographer. For upcoming EUV lithography we expect quite some commonality and similar source shapes to be used when comparing with immersion lithography, but we also expect some new aspects specific to EUV. In this paper we present a methodology to predict optimum source shapes for simple test patterns by studying basic diffraction properties. This knowledge can then be used in understanding the outcome of real life optimizations by full scale Source Mask Optimization routines, where the lithographer will take many clips and many additional aspects (e.g. illuminator efficiency) into account.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jo Finders, Jo Finders, Eelco van Setten, Eelco van Setten, Par Broman, Par Broman, Erik Wang, Erik Wang, John McNamara, John McNamara, Paul van Adrichem, Paul van Adrichem, } "EUV source optimization driven by fundamental diffraction considerations", Proc. SPIE 10450, International Conference on Extreme Ultraviolet Lithography 2017, 104500C (26 October 2017); doi: 10.1117/12.2280717; https://doi.org/10.1117/12.2280717

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