16 October 2017 High-NA EUV lithography enabling Moore’s law in the next decade
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Abstract
While EUV systems equipped with a 0.33 Numerical Aperture lenses are readying to start volume manufacturing, ASML and Zeiss are ramping up their activities on a EUV exposure tool with Numerical Aperture of 0.55. The purpose of this scanner, targeting an ultimate resolution of 8nm, is to extend Moore’s law throughout the next decade. A novel, anamorphic lens design, capable of providing the required Numerical Aperture has been investigated; This lens will be paired with new, faster stages and more accurate sensors enabling Moore’s law economical requirements, as well as the tight focus and overlay control needed for future process nodes. The tighter focus and overlay control budgets, as well as the anamorphic optics, will drive innovations in the imaging and OPC modelling. Furthermore, advances in resist and mask technology will be required to image lithography features with less than 10nm resolution. This paper presents an overview of the target specifications, key technology innovations and imaging simulations demonstrating the advantages as compared to 0.33NA and showing the capabilities of the next generation EUV systems.
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© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jan van Schoot, Jan van Schoot, Kars Troost, Kars Troost, Frank Bornebroek, Frank Bornebroek, Rob van Ballegoij, Rob van Ballegoij, Sjoerd Lok, Sjoerd Lok, Peter Krabbendam, Peter Krabbendam, Judon Stoeldraijer, Judon Stoeldraijer, Erik Loopstra, Erik Loopstra, Jos P. Benschop, Jos P. Benschop, Jo Finders, Jo Finders, Hans Meiling, Hans Meiling, Eelco van Setten, Eelco van Setten, Bernhard Kneer, Bernhard Kneer, Peter Kuerz, Peter Kuerz, Winfried Kaiser, Winfried Kaiser, Tilmann Heil, Tilmann Heil, Sascha Migura, Sascha Migura, Jens Timo Neumann, Jens Timo Neumann, } "High-NA EUV lithography enabling Moore’s law in the next decade", Proc. SPIE 10450, International Conference on Extreme Ultraviolet Lithography 2017, 104500U (16 October 2017); doi: 10.1117/12.2280592; https://doi.org/10.1117/12.2280592
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