16 October 2017 Optical proximity correction for anamorphic extreme ultraviolet lithography
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Abstract
The change from isomorphic to anamorphic optics in high numerical aperture (NA) extreme ultraviolet (EUV) scanners necessitates changes to the mask data preparation flow. The required changes for each step in the mask tape out process are discussed, with a focus on optical proximity correction (OPC). When necessary, solutions to new problems are demonstrated, and verified by rigorous simulation.

Additions to the OPC model include accounting for anamorphic effects in the optics, mask electromagnetics, and mask manufacturing. The correction algorithm is updated to include awareness of anamorphic mask geometry for mask rule checking (MRC). OPC verification through process window conditions is enhanced to test different wafer scale mask error ranges in the horizontal and vertical directions.

This work will show that existing models and methods can be updated to support anamorphic optics without major changes. Also, the larger mask size in the Y direction can result in better model accuracy, easier OPC convergence, and designs which are more tolerant to mask errors.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chris Clifford, Chris Clifford, Michael Lam, Michael Lam, Ananthan Raghunathan, Ananthan Raghunathan, Fan Jiang, Fan Jiang, Germain Fenger, Germain Fenger, Kostas Adam, Kostas Adam, } "Optical proximity correction for anamorphic extreme ultraviolet lithography", Proc. SPIE 10450, International Conference on Extreme Ultraviolet Lithography 2017, 104500V (16 October 2017); doi: 10.1117/12.2280548; https://doi.org/10.1117/12.2280548
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