CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume 10450 > Article
Presentation
16 October 2017 Next-generation EUV lithography productivity (Conference Presentation)
Erik R. Hosler
Author Affiliations +
Proceedings Volume 10450, International Conference on Extreme Ultraviolet Lithography 2017; 104500X (2017) https://doi.org/10.1117/12.2282183
Event: SPIE Photomask Technology and EUV Lithography, 2017, Monterey, California, United States
Abstract
Beyond EUV insertion to high-volume manufacturing, the extendibility of the technology is dependent on the cost scaling advantages of high-NA or multi-patterning EUV lithography. Several concerns have been raised regarding the cost and lithographic feasibility of high-NA, including resist performance, productivity, depth of focus, mask infrastructure and field utilization/stitching capability. The intrinsic requirement of half-field exposures for high-NA lithography drives a necessary investigation on reduced field utilization verses stitching performance of the separate half fields. Furthermore, the additional mask for full fields dies will drive additional cost, complexity and overall overhead as compared to EUV NA 0.33 double patterning or other self-aligned technique. Here, the implication to EUV throughput capacity is analyzed within the context of the 7/5/3 nm technology nodes, specifically considering field utilization and scanner productivity as a function of source power and resist dose.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Erik R. Hosler "Next-generation EUV lithography productivity (Conference Presentation)", Proc. SPIE 10450, International Conference on Extreme Ultraviolet Lithography 2017, 104500X (16 October 2017); https://doi.org/10.1117/12.2282183
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 PRESENTATION
WATCH
PRESENTATION SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
KEYWORDS
Extreme ultraviolet lithography
Extreme ultraviolet
Lithography
Photomasks
Double patterning technology
EUV optics
High volume manufacturing
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top