A study on enhancing EUV resist sensitivity (2)

Atsushi Sekiguchi; Yoko Matsumoto; Michiya Naito; Yoshiyuki Utsumi; Tetsuo Harada; Takeo Watanabe

doi:10.1117/12.2280377

26 October 2017 A study on enhancing EUV resist sensitivity (2)

Atsushi Sekiguchi, Yoko Matsumoto, Michiya Naito, Yoshiyuki Utsumi, Tetsuo Harada, Takeo Watanabe

Proceedings Volume 10450, International Conference on Extreme Ultraviolet Lithography 2017; 104501E (2017) https://doi.org/10.1117/12.2280377
Event: SPIE Photomask Technology and EUV Lithography, 2017, Monterey, California, United States

Abstract

To improve EUV resist sensitivity, studies have sought to enhance EUV light absorption by adding metals characterized by high EUV light absorption to the resist polymer. This approach is intended to increase secondary electron emission, thereby enhancing PAG reactivity and improving acid generation efficiency [1-3]. As reported in our previous report, to determine whether adding metals characterized by high EUV light absorption actually enhances sensitivity, we performed transmittance measurements and sensitivity evaluations of resist samples doped with ZrO₂ or TeO₂ nanoparticles, which have low and high EUV light absorption, respectively, in molar quantities of 0-2 relative to PAG. The samples were subjected to EUV exposure at the NewSUBARU synchrotron radiation facility. The results of transmittance measurements and sensitivity evaluations showed that, while the ZrO₂-doped resist showed no changes in absorption or sensitivity, the TeO₂-doped resist showed enhancement in both properties. Based on these results, we confirmed that adding metals characterized by high EUV light absorption to the EUV resist enhances its EUV light absorption and increases secondary electron emission, thereby enhancing PAG reactivity and improving acid generation efficiency [4-5]. In the efforts discussed in the present report, we examined whether adding metals directly to PAG could further enhance sensitivity by increasing the EUV light absorption of PAG itself, thereby efficiently heightening the effect of the secondary electron emission on PAG.

Citation Download Citation

Atsushi Sekiguchi, Yoko Matsumoto, Michiya Naito, Yoshiyuki Utsumi, Tetsuo Harada, and Takeo Watanabe "A study on enhancing EUV resist sensitivity (2)", Proc. SPIE 10450, International Conference on Extreme Ultraviolet Lithography 2017, 104501E (26 October 2017); https://doi.org/10.1117/12.2280377

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KEYWORDS

Metals

Extreme ultraviolet

Absorption

Extreme ultraviolet lithography

Polymers

Tin

Tellurium

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