Applications of RCWA on EUV mask optics

Taian Fan; Lisong Dong; Yayi Wei

doi:10.1117/12.2280445

16 October 2017 Applications of RCWA on EUV mask optics

Taian Fan, Lisong Dong, Yayi Wei

Author Affiliations +

Proceedings Volume 10450, International Conference on Extreme Ultraviolet Lithography 2017; 104501X (2017) https://doi.org/10.1117/12.2280445
Event: SPIE Photomask Technology and EUV Lithography, 2017, Monterey, California, United States

Abstract

The oblique illumination in EUVL system combined with relative thick absorber layer of EUV mask introduces many new challenges for mask simulation, like asymmetric phase deformation, shadowing effects , secondary scattering. Besides, these effects result in the ineffectiveness of the Hopkins approach and require new method for mask diffraction computation. A 3D RCWA algorithm is implemented to perform rigorous computation of lights diffracted by the EUV masks. Several examples are designed, analyzed and presented in this paper. Furthermore, a fast version of the rigorous 3D algorithm is implemented by properly decomposing the 3D model into multiple simpler ones, thus the computational time is reduced.

Citation Download Citation

Taian Fan, Lisong Dong, and Yayi Wei "Applications of RCWA on EUV mask optics", Proc. SPIE 10450, International Conference on Extreme Ultraviolet Lithography 2017, 104501X (16 October 2017); https://doi.org/10.1117/12.2280445

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