16 October 2017 Applications of RCWA on EUV mask optics
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Abstract
The oblique illumination in EUVL system combined with relative thick absorber layer of EUV mask introduces many new challenges for mask simulation, like asymmetric phase deformation, shadowing effects , secondary scattering. Besides, these effects result in the ineffectiveness of the Hopkins approach and require new method for mask diffraction computation. A 3D RCWA algorithm is implemented to perform rigorous computation of lights diffracted by the EUV masks. Several examples are designed, analyzed and presented in this paper. Furthermore, a fast version of the rigorous 3D algorithm is implemented by properly decomposing the 3D model into multiple simpler ones, thus the computational time is reduced.
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Taian Fan, Taian Fan, Lisong Dong, Lisong Dong, Yayi Wei, Yayi Wei, } "Applications of RCWA on EUV mask optics", Proc. SPIE 10450, International Conference on Extreme Ultraviolet Lithography 2017, 104501X (16 October 2017); doi: 10.1117/12.2280445; https://doi.org/10.1117/12.2280445
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