16 October 2017 Characterization of EBL2 EUV exposure facility
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Abstract
TNO has built EBL2; a facility for EUV exposure testing and surface analysis. EBL2 is capable of testing EUV optics, EUV photomasks, pellicles, and other components under controlled conditions, relevant to EUV scanner and source operation at all foreseen source power nodes. The system consists of an EUV beam line coupled to an X-ray Photoelectron Spectroscopy system by an automated sample handler. The current contribution reports on the results of the qualification testing of the EUV beam line. Topics investigated include handling and position control, thermal management, a relevant gas environment, EUV irradiation and metrology, and first EUV exposures.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Edwin te Sligte, Edwin te Sligte, Michel van Putten, Michel van Putten, Freek T. Molkenboer, Freek T. Molkenboer, Peter van der Walle, Peter van der Walle, Pim M. Muilwijk, Pim M. Muilwijk, Norbert B. Koster, Norbert B. Koster, Jeroen Westerhout, Jeroen Westerhout, Peter J. Kerkhof, Peter J. Kerkhof, Bastiaan W. Oostdijck, Bastiaan W. Oostdijck, Wouter Mulckhuyse, Wouter Mulckhuyse, Alex F. Deutz, Alex F. Deutz, } "Characterization of EBL2 EUV exposure facility", Proc. SPIE 10450, International Conference on Extreme Ultraviolet Lithography 2017, 1045027 (16 October 2017); doi: 10.1117/12.2280356; https://doi.org/10.1117/12.2280356
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