Front Matter: Volume 10451
Proc. SPIE 10451, Front Matter: Volume 10451, 1045101 (21 November 2017); doi: 10.1117/12.2293163
Keynote and Invited Session
Proc. SPIE 10451, Extending the era of Moore's Law, 1045102 (16 October 2017); doi: 10.1117/12.2286671
Proc. SPIE 10451, 2017 mask maker survey conducted by the eBeam Initiative, 1045103 (16 October 2017); doi: 10.1117/12.2280591
Mask Data Preparation I
Proc. SPIE 10451, Manufacturing challenges for curvilinear masks, 1045104 (16 October 2017); doi: 10.1117/12.2280470
Proc. SPIE 10451, VSB fracture optimization for mask write time reduction, 1045105 (16 October 2017); doi: 10.1117/12.2280465
Mask Data Preparation II
Proc. SPIE 10451, Adopting rigorous verification flow in fabrication of silicon photonic devices, 1045106 (16 October 2017); doi: 10.1117/12.2280485
Proc. SPIE 10451, An efficient tool to rewrite a VSB12 format jobdeck for any target VSB12 machine, 1045107 (16 October 2017); doi: 10.1117/12.2280586
Proc. SPIE 10451, Full-chip GPU-accelerated curvilinear EUV dose and shape correction, 1045108 (31 October 2017); doi: 10.1117/12.2281686
Proc. SPIE 10451, CLMPC: curvilinear MPC in a mask data preparation flow, 1045109 (31 October 2017); doi: 10.1117/12.2282502
Machine Learning
Proc. SPIE 10451, Machine learning for mask/wafer hotspot detection and mask synthesis, 104510A (16 October 2017); doi: 10.1117/12.2282943
Proc. SPIE 10451, Machine learning of IC layout "styles" for Mask Data Processing verification and optimization (Conference Presentation), 104510B (16 October 2017); doi: 10.1117/12.2282885
Proc. SPIE 10451, Impact of feature extraction to accuracy of machine learning based hotspot detection, 104510C (16 October 2017); doi: 10.1117/12.2282414
Proc. SPIE 10451, Machine learning assisted SRAF placement for full chip, 104510D (16 October 2017); doi: 10.1117/12.2283493
Photomask Japan 2017
Proc. SPIE 10451, Fabrication of cylindrical micro-parts using synchronous rotary scan-projection lithography and chemical etching, 104510G (16 October 2017); doi: 10.1117/12.2284735
Proc. SPIE 10451, The capability of measuring cross-sectional profile for hole patterns in nanoimprint templates using small-angle x-ray scattering, 104510H (16 October 2017); doi: 10.1117/12.2284761
EUV Readiness: Joint session with conferences 10450 and 10451
Proc. SPIE 10451, EUV mask readiness for HVM (Conference Presentation), 104510I (16 October 2017); doi: 10.1117/12.2280687
EUV Mask Inspection: Joint session with conferences 10451 and 10450
Proc. SPIE 10451, Actinic review of EUV masks: challenges and achievements in delivering the perfect mask for EUV production, 104510J (16 October 2017); doi: 10.1117/12.2280689
Proc. SPIE 10451, DUV inspection beyond optical resolution limit for EUV mask of hp 1X nm, 104510K (16 October 2017); doi: 10.1117/12.2280504
Proc. SPIE 10451, EUV reticle print verification with advanced broadband optical wafer inspection and e-Beam review systems, 104510L (16 October 2017); doi: 10.1117/12.2281632
EUV Mask Metrology and Inspection: Joint session with conferences 10450 and 10451
Proc. SPIE 10451, 1X HP EUV reticle inspection with a 193nm inspection system, 104510M (22 January 2018); doi: 10.1117/12.2281354
EUV Mask Pellicle: Joint session with conferences 10451 and 10450
Proc. SPIE 10451, Pellicle films supporting the ramp to HVM with EUV, 104510O (16 October 2017); doi: 10.1117/12.2280560
Proc. SPIE 10451, CNT EUV pellicle: moving towards a full-size solution, 104510P (16 October 2017); doi: 10.1117/12.2280632
Proc. SPIE 10451, Development of EUV pellicle for suppression of contamination, haze, and outgas generation, 104510Q (16 October 2017); doi: 10.1117/12.2280595
Proc. SPIE 10451, EUV optical characterization of alternative membrane materials for EUV pellicles , 104510R (16 October 2017); doi: 10.1117/12.2280553
Proc. SPIE 10451, Rigorous simulation of EUV mask pellicle, 104510S (16 October 2017); doi: 10.1117/12.2280339
Student Session: Joint session with conferences 10451 and 10450
Proc. SPIE 10451, Enhanced critical feature representation for fuzzy-matching for lithography hotspot detection, 104510T (16 October 2017); doi: 10.1117/12.2279538
Mask/OPC Interactions
Proc. SPIE 10451, The impact of inconsistency in assist feature generation on OPC performance, 104510V (23 October 2017); doi: 10.1117/12.2281968
Proc. SPIE 10451, Edge placement errors in EUV from aberration variation, 104510W (16 October 2017); doi: 10.1117/12.2280609
Proc. SPIE 10451, Process window discovery from mask inspection for hotspot analysis and verification, 104510X (16 October 2017); doi: 10.1117/12.2281215
Proc. SPIE 10451, Estimated mask contours: potential applications, 104510Y (16 October 2017); doi: 10.1117/12.2280608
Metrology
Proc. SPIE 10451, Implementation of CDSEM contour extraction on OPC verification, 104510Z (16 October 2017); doi: 10.1117/12.2280422
Proc. SPIE 10451, Selective measurement of small metrology targets using CD-GISAXS, 1045110 (16 October 2017); doi: 10.1117/12.2280455
Proc. SPIE 10451, Off-line mask-to-mask registration characterization as enabler for computational overlay, 1045111 (16 October 2017); doi: 10.1117/12.2280635
Proc. SPIE 10451, Dimensional measurement sensitivity analysis for a MoSi photomask using DUV reflection scatterfield imaging microscopy, 1045112 (8 November 2017); doi: 10.1117/12.2280782
Proc. SPIE 10451, Automated defect disposition with AIMS AutoAnalysis, 1045113 (16 October 2017); doi: 10.1117/12.2281884
Photomask Lithography, and Mask Process & Repair
Proc. SPIE 10451, Characterization of acoustic cavitation from a megasonic nozzle transducer for photomask cleaning, 1045114 (16 October 2017); doi: 10.1117/12.2281272
Proc. SPIE 10451, Advanced photomask chrome etch: selectivity without sacrifice, 1045115 (18 October 2017); doi: 10.1117/12.2281439
Proc. SPIE 10451, Improving back end of line productivity through smart automation, 1045116 (16 October 2017); doi: 10.1117/12.2280832
Proc. SPIE 10451, Multi-beam mask writer MBM-1000, 1045117 (16 October 2017); doi: 10.1117/12.2280502
Nano Imprint Lithography
Proc. SPIE 10451, Development of an inkjet-enabled adaptive planarization process, 104511A (16 October 2017); doi: 10.1117/12.2280311
Proc. SPIE 10451, Progress in nanoimprint wafer and mask systems for high volume semiconductor manufacturing, 104511B (16 October 2017); doi: 10.1117/12.2280440
Poster Session: EUV Inspection
Proc. SPIE 10451, Dark field technology for EUV and optical mask blank inspection, 104511D (16 October 2017); doi: 10.1117/12.2281057
Poster Session: Materials and Novel Applications
Proc. SPIE 10451, Laser-scan lithography and electrolytic etching for fabricating mesh structures on stainless-steel pipes 100 um in diameter, 104511I (16 October 2017); doi: 10.1117/12.2280384
Poster Session: OPC
Proc. SPIE 10451, Automatic SRAF printing detection based on contour extraction, 104511J (16 October 2017); doi: 10.1117/12.2280186
Proc. SPIE 10451, Strategies on quantitative data preparation for OPC model calibration to reduce catastrophic failure at 7nm node, 104511K (16 October 2017); doi: 10.1117/12.2280622
Poster Session: OPC/Mask Interactions
Proc. SPIE 10451, Aerial image ORC checks and their correlation to wafer-edge yield limitation for metals: a study and an OPC resolution, 104511L (16 October 2017); doi: 10.1117/12.2280568
Proc. SPIE 10451, Advanced process control based on litho-patterning density , 104511M (16 October 2017); doi: 10.1117/12.2280570
Proc. SPIE 10451, Improved testpatterns and coverage for complex SrAF to optimize 5nm and below OPC and mask patterning, 104511N (16 October 2017); doi: 10.1117/12.2280585
Poster Session: Process and Repair
Proc. SPIE 10451, Direct laser writing: virtual mask optimization for optical quality control artefact, 104511Q (16 October 2017); doi: 10.1117/12.2280547
Proc. SPIE 10451, Dual-line fabrication method in direct laser lithography to reduce the manufacturing time of diffractive optics elements, 104511R (16 October 2017); doi: 10.1117/12.2280620
Proc. SPIE 10451, Transparent and conductive backside coating of EUV lithography masks for ultra short pulse laser correction, 104511S (16 October 2017); doi: 10.1117/12.2280526
Proc. SPIE 10451, Mask process correction method comparison and study: CD-SEM box versus standard correction method, 104511T (16 October 2017); doi: 10.1117/12.2280280