16 October 2017 Manufacturing challenges for curvilinear masks
Author Affiliations +
To achieve the ultimate resolution and process control from an optical (193i 1.35NA) scanner system, it is desirable to be able to exploit both source and mask degrees of freedom to create the imaging conditions for any given set of patterns that comprise a photomask. For the source it has been possible to create an illumination system that allows for almost no restrictions in the location and intensity of source points in the illumination plane [1]. For the mask, it has been harder to approach the ideal continuous phase and transmission mask that theoretically would have the best imaging performance. Mask blanks and processing requirements have limited us to binary (1 and 0 amplitude, or 1 and -0.25 amplitude (6% attenuated PSM)) or Alternating PSM (1, 0 and -1 amplitude) solutions. Furthermore, mask writing (and OPC algorithms) have limited us to Manhattan layouts for full chip logic solutions. Recent developments in the areas of mask design and newly developed Multi-Beam Mask Writers (MBMW) have removed the mask limitation to Manhattan geometries [2]. In this paper we consider some of the manufacturing challenges for these curvilinear masks.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chris Spence, Chris Spence, Quan Zhang, Quan Zhang, Vincent Shu, Vincent Shu, Been-Der Chen, Been-Der Chen, Stanislas Baron, Stanislas Baron, Yasuko Saito, Yasuko Saito, Masakazu Hamaji, Masakazu Hamaji, Yasuaki Horima, Yasuaki Horima, Shuichiro Ohara, Shuichiro Ohara, "Manufacturing challenges for curvilinear masks", Proc. SPIE 10451, Photomask Technology, 1045104 (16 October 2017); doi: 10.1117/12.2280470; https://doi.org/10.1117/12.2280470


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