16 October 2017 DUV inspection beyond optical resolution limit for EUV mask of hp 1X nm
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Abstract
It is generally said that conventional deep ultraviolet inspection tools have difficulty meeting the defect requirement for extreme ultraviolet masks of hp 1X nm. In previous studies, it has been shown that the newly developed optics and systems using deep ultraviolet, named Super Inspection Resolution Improvement method for UnreSolved pattern (SIRIUS), has high sensitivity for nanoimprint lithography templates with unresolved patterns which are the same scale as the wafer. In this paper, the capability of SIRIUS for the extreme ultraviolet mask of hp 1X nm lines and spaces pattern has been studied by evaluating the signal to noise ratio of inspection images and capture rates with 5 runs to the target defects which cause over 10% printed wafer critical dimension errors calculated by simulation. It was demonstrated that the signal to noise ratio was increased and the all target defects became detectable with the throughput of 120 min per 100 × 100 mm2 . Additionally, the printability of natural defects detected with SIRIUS was analyzed. It was confirmed that SIRIUS was able to detect natural defects under 10% of wafer critical dimension. In conclusion, we confirm that SIRIUS can be available for the extreme ultraviolet mask inspection of hp 1X nm lines and spaces pattern.
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Masato Naka, Akihiko Ando, Keiko Morishita, Ryoji Yoshikawa, Takashi Kamo, Takashi Hirano, Masamitsu Itoh, "DUV inspection beyond optical resolution limit for EUV mask of hp 1X nm", Proc. SPIE 10451, Photomask Technology, 104510K (16 October 2017); doi: 10.1117/12.2280504; https://doi.org/10.1117/12.2280504
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