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16 October 2017 Pellicle films supporting the ramp to HVM with EUV
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EUV pellicles are needed to support EUV lithography in high volume manufacturing. We demonstrate progress in cap layer design for increased EUV transmission and infrared emission of the Polysilicon-film. In our research lab we obtained EUV transmission of 90% and good emissivity for a fully capped pSi film. We also discuss results on next generation EUV pellicle films. These include metal-silicides and graphite. Next-gen film performance is compared to the current generation pSi film. These films are expected to be stable at higher operating temperature than pSi. Metal-silicides have the advantage of sharing a similar process flow as that of pSi, while graphite shows ultimate high temperature performance at the expense of a more complicated manufacturing flow. Capping layers are needed here as well and capping strategies are discussed for these film generations.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. J. van Zwol, M. Nasalevich, W. P. Voorthuijzen, E. Kurganova, A. Notenboom, D. Vles, M. Peter, W. Symens, A. J. M. Giesbers, J. H. Klootwijk, R. W. E. van de Kruijs, and W. J. van der Zande "Pellicle films supporting the ramp to HVM with EUV", Proc. SPIE 10451, Photomask Technology 2017, 104510O (16 October 2017);


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