16 October 2017 Rigorous simulation of EUV mask pellicle
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Abstract
Pellicles that satisfy transmission, emission, thermal, and mechanical requirements are highly desired for EUV high volume manufacturing. We present here the capability of integrating pellicles in the full flow of rigorous EUV lithography simulations. This platform allows us to investigate new coherence effects in EUV lithography when pellicle is used. Critical dimension uniformity and throughput loss due to pellicle defects and add-on particles are also analyzed. Our study provides theoretical insights into pellicle development and facilitates pellicle insertion in EUV lithography.
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Yulu Chen, Yulu Chen, Xiangyu Zhou, Xiangyu Zhou, Ulrich Klostermann, Ulrich Klostermann, Lei Sun, Lei Sun, Obert Wood, Obert Wood, Mariya Braylovska, Mariya Braylovska, Sajan Marokkey, Sajan Marokkey, Francis Goodwin, Francis Goodwin, } "Rigorous simulation of EUV mask pellicle", Proc. SPIE 10451, Photomask Technology, 104510S (16 October 2017); doi: 10.1117/12.2280339; https://doi.org/10.1117/12.2280339
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