16 October 2017 Process window discovery from mask inspection for hotspot analysis and verification
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A new technology transforms mask inspection images through focus into 3D lithography images in resist. This enables early detection and ranking of hotspots, and distinguishes mask-induced and process-induced hotspots. The results can be used in several ways including: 1) feed back to OPC teams to improve process window; 2) feed forward to the litho team for scanner adjustment; and, 3) feed forward to wafer inspection in the form of care areas to reduce time to result for wafer-based process window discovery.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James Cheng, William Chou, C. H. Twu, Hsin-Fu Chou, Jackie Cheng, Colbert Lu, Heng-Jen Lee, Bosheng Zhang, Mehdi Daneshpanah, Apo Sezginer, David Wu, Mike Yeh, Albert Chien, "Process window discovery from mask inspection for hotspot analysis and verification", Proc. SPIE 10451, Photomask Technology, 104510X (16 October 2017); doi: 10.1117/12.2281215; https://doi.org/10.1117/12.2281215


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