16 October 2017 Process window discovery from mask inspection for hotspot analysis and verification
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Abstract
A new technology transforms mask inspection images through focus into 3D lithography images in resist. This enables early detection and ranking of hotspots, and distinguishes mask-induced and process-induced hotspots. The results can be used in several ways including: 1) feed back to OPC teams to improve process window; 2) feed forward to the litho team for scanner adjustment; and, 3) feed forward to wafer inspection in the form of care areas to reduce time to result for wafer-based process window discovery.
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James Cheng, James Cheng, William Chou, William Chou, C. H. Twu, C. H. Twu, Hsin-Fu Chou, Hsin-Fu Chou, Jackie Cheng, Jackie Cheng, Colbert Lu, Colbert Lu, Heng-Jen Lee, Heng-Jen Lee, Bosheng Zhang, Bosheng Zhang, Mehdi Daneshpanah, Mehdi Daneshpanah, Apo Sezginer, Apo Sezginer, David Wu, David Wu, Mike Yeh, Mike Yeh, Albert Chien, Albert Chien, } "Process window discovery from mask inspection for hotspot analysis and verification", Proc. SPIE 10451, Photomask Technology, 104510X (16 October 2017); doi: 10.1117/12.2281215; https://doi.org/10.1117/12.2281215
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