16 October 2017 Implementation of CDSEM contour extraction on OPC verification
Author Affiliations +
Abstract
CDSEM metrology is a powerful tool to obtain silicon data. However, as our technology nodes advance shrink to 14nm and below, the CD measurement data from CDSEM can hardly provide sufficient information for OPC verification (OPCV) and the related silicon verification. On the other hand, the abundant information from CDSEM images has not been fully utilized to assist our data analysis. In this context, contour extraction emerges as the best method to obtain extensive information from CDSEM images, especially for 2D structures. This paper demonstrates that contour extraction bridges the gap between the needs of 2D characterization and the limited capability of CDSEM measurement. The extracted contour enables automatic identification of litho-hotspots using OPCV tools, especially for non-CD related hotspots. Statistical silicon data extraction and analysis on complex geometries is viable with extracted contours. The silicon data can then be feedback to the evolution of non-CD OPCV checks, where simple CD measurement is inadequate. Effective CD can also be calculated from the obtained 2D information, with which Bossung curves can be built and provide complementary information.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Liang Cao, Jie Zhang, Hongxin Zhang, Jiechang Hou, Guoxiang Ning, William Wilkinson, Shaowen Gao, Norman Chen, "Implementation of CDSEM contour extraction on OPC verification", Proc. SPIE 10451, Photomask Technology, 104510Z (16 October 2017); doi: 10.1117/12.2280422; https://doi.org/10.1117/12.2280422
PROCEEDINGS
7 PAGES


SHARE
Back to Top