16 October 2017 Multi-beam mask writer MBM-1000
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Abstract
Multi-beam mask writer MBM-1000 is developed for N5. It is designed to accomplish higher throughput than a singlebeam VSB writer EBM-9500 at shot count higher than 500 G/pass, and write masks with low sensitivity resist to have better CDU and patterning resolution. Product version of blanking aperture array (BAA) for MBM-1000 is fabricated along with data transfer system to accomplish data rate of 300 Gbps. They have been integrated with writing control software based on MBF format, a tool-specific format which handles any-angle pattern and polygon patterns. Writing test without re-adjustment of beam current showed that exposure time control by BAA blanking is very stable, and linear CD drift is less than 0.1 nm for 10 hours. Complex OPC pattern and ring pattern were printed on low-sensitivity pCAR resist and showed good resolution to resolve 25 nm isolated line.
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Hiroshi Matsumoto, Hiroshi Matsumoto, Hideo Inoue, Hideo Inoue, Hiroshi Yamashita, Hiroshi Yamashita, Ryosuke Ueba, Ryosuke Ueba, Kenji Otoshi, Kenji Otoshi, Hirokazu Yamada, Hirokazu Yamada, Jin Choi, Jin Choi, Byoung-Sup Ahn, Byoung-Sup Ahn, Jong-Mun Park, Jong-Mun Park, Sang-Hee Lee, Sang-Hee Lee, Shuichi Tamamushi, Shuichi Tamamushi, Chan-Uk Jeon, Chan-Uk Jeon, } "Multi-beam mask writer MBM-1000", Proc. SPIE 10451, Photomask Technology, 1045117 (16 October 2017); doi: 10.1117/12.2280502; https://doi.org/10.1117/12.2280502
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