22 August 2017 Organic semiconductor rubrene thin films deposited by pulsed laser evaporation of solidified solutions
Author Affiliations +
Proceedings Volume 10453, Third International Conference on Applications of Optics and Photonics; 104532H (2017) https://doi.org/10.1117/12.2276250
Event: Third International Conference on Applications of Optics and Photonics, 2017, Faro, Portugal
Abstract
Organic semiconductor rubrene (C42H28) belongs to most preferred spintronic materials because of the high charge carrier mobility up to 40 cm2(V·s)-1. However, the fabrication of a defect-free, polycrystalline rubrene for spintronic applications represents a difficult task. We report preparation and properties of rubrene thin films deposited by pulsed laser evaporation of solidified solutions. Samples of rubrene dissolved in aromatic solvents toluene, xylene, dichloromethane and 1,1-dichloroethane (0.23-1% wt) were cooled to temperatures in the range of 16.5-163 K and served as targets. The target ablation was provided by a pulsed 1064 nm or 266 nm laser. For films of thickness up to 100 nm deposited on Si, glass and ITO glass substrates, the Raman and AFM data show presence of the mixed crystalline and amorphous rubrene phases. Agglomerates of rubrene crystals are revealed by SEM observation too, and presence of oxide/peroxide (C42H28O2) in the films is concluded from matrix-assisted laser desorption/ionization time-of-flight spectroscopic analysis.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. Majewska, M. Gazda, R. Jendrzejewski, S. Majumdar, M. Sawczak, G. Śliwiński, "Organic semiconductor rubrene thin films deposited by pulsed laser evaporation of solidified solutions ", Proc. SPIE 10453, Third International Conference on Applications of Optics and Photonics, 104532H (22 August 2017); doi: 10.1117/12.2276250; https://doi.org/10.1117/12.2276250
PROCEEDINGS
9 PAGES


SHARE
Back to Top