Paper
22 August 2017 Resonant tunnelling diode based high speed optoelectronic transmitters
Jue Wang, G. C. Rodrigues, Abdullah Al-Khalidi, José M. L. Figueiredo, Edward Wasige
Author Affiliations +
Proceedings Volume 10453, Third International Conference on Applications of Optics and Photonics; 104532Y (2017) https://doi.org/10.1117/12.2276350
Event: Third International Conference on Applications of Optics and Photonics, 2017, Faro, Portugal
Abstract
Resonant tunneling diode (RTD) integration with photo detector (PD) from epi-layer design shows great potential for combining terahertz (THz) RTD electronic source with high speed optical modulation. With an optimized layer structure, the RTD-PD presented in the paper shows high stationary responsivity of 5 A/W at 1310 nm wavelength. High power microwave/mm-wave RTD-PD optoelectronic oscillators are proposed. The circuitry employs two RTD-PD devices in parallel. The oscillation frequencies range from 20-44 GHz with maximum attainable power about 1 mW at 34/37/44GHz.
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Jue Wang, G. C. Rodrigues, Abdullah Al-Khalidi, José M. L. Figueiredo, and Edward Wasige "Resonant tunnelling diode based high speed optoelectronic transmitters", Proc. SPIE 10453, Third International Conference on Applications of Optics and Photonics, 104532Y (22 August 2017); https://doi.org/10.1117/12.2276350
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Cited by 2 scholarly publications.
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KEYWORDS
Oscillators

Optoelectronics

Diodes

Indium gallium arsenide

Wireless communications

Broadband telecommunications

Radio optics

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