22 August 2017 Resonant tunneling diode photodetectors for optical communications
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Proceedings Volume 10453, Third International Conference on Applications of Optics and Photonics; 1045307 (2017); doi: 10.1117/12.2271317
Event: Third International Conference on Applications of Optics and Photonics, 2017, Faro, Portugal
Abstract
Resonant tunneling diodes (RTDs) have been extensively studied due to their potential applications in very high speed electronics, optical communications, and terahertz generation. In this work, we report the latest results on the characterization of the resonant tunneling diode photo-detectors (RTD-PDs), incorporating InGaAlAs light sensitive layers for sensing at the telecommunication wavelength of λ = 1310 nm. We have measured responsivities up to 28.8 A/W and light induced voltage shift of 204.8 V/W for light injection powers around 0.25 mW.
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Gil C. Rodrigues, João F. Rei, James A. Foot, Khalid H. Alharbi, Abdullah Al-Khalidi, Jue Wang, Edward Wasige, José Figueiredo, "Resonant tunneling diode photodetectors for optical communications", Proc. SPIE 10453, Third International Conference on Applications of Optics and Photonics, 1045307 (22 August 2017); doi: 10.1117/12.2271317; http://dx.doi.org/10.1117/12.2271317
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KEYWORDS
Optoelectronics

Diodes

Photodetectors

Telecommunications

High speed electronics

Indium gallium arsenide

Optical communications

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