22 August 2017 Resonant tunnelling diode based high speed optoelectronic transmitters
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Proceedings Volume 10453, Third International Conference on Applications of Optics and Photonics; 104532Y (2017) https://doi.org/10.1117/12.2276350
Event: Third International Conference on Applications of Optics and Photonics, 2017, Faro, Portugal
Abstract
Resonant tunneling diode (RTD) integration with photo detector (PD) from epi-layer design shows great potential for combining terahertz (THz) RTD electronic source with high speed optical modulation. With an optimized layer structure, the RTD-PD presented in the paper shows high stationary responsivity of 5 A/W at 1310 nm wavelength. High power microwave/mm-wave RTD-PD optoelectronic oscillators are proposed. The circuitry employs two RTD-PD devices in parallel. The oscillation frequencies range from 20-44 GHz with maximum attainable power about 1 mW at 34/37/44GHz.
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Jue Wang, Jue Wang, G. C. Rodrigues, G. C. Rodrigues, Abdullah Al-Khalidi, Abdullah Al-Khalidi, José M. L. Figueiredo, José M. L. Figueiredo, Edward Wasige, Edward Wasige, } "Resonant tunnelling diode based high speed optoelectronic transmitters", Proc. SPIE 10453, Third International Conference on Applications of Optics and Photonics, 104532Y (22 August 2017); doi: 10.1117/12.2276350; https://doi.org/10.1117/12.2276350
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