13 July 2017 EUV modeling in the multi-beam mask writing era
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Abstract
For some years it has been known that the presence of a multi-layer stack creates an enhanced back-scatter effect at the 1μm length scale. Several authors have reported a non-Gaussian behavior – exponential or worse – that is challenging to both simulate and correct for in a production environment due to the long interaction area of the effect. With the onset of extreme ultra-violet (EUV) lithography, and the likely use in the new multi-beam mask writers, we revisit the EUV midrange effect from first principles, identify the impact from the new mask writers, and demonstrate a production-ready system to characterize and correct for the effect.
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Ryan Pearman, Ryan Pearman, Harold Zable, Harold Zable, Aki Fujimura, Aki Fujimura, } "EUV modeling in the multi-beam mask writing era", Proc. SPIE 10454, Photomask Japan 2017: XXIV Symposium on Photomask and Next-Generation Lithography Mask Technology, 1045408 (13 July 2017); doi: 10.1117/12.2282784; https://doi.org/10.1117/12.2282784
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