Recently TNO has established EBL2; an exposure and analysis facility for testing EUV optics, reticles and pellicles
under relevant EUV scanner and source conditions. The facility and EUV source complies with the ASML power
roadmap of EUV systems up to a power of 500 W IF. This enables life time testing of EUV optics, reticles and pellicles
under conditions which are not yet available to industry, helping the industry in preparing for HVM production.
The EBL2 facility consists of a EUV source, collector optics, exposure chamber, XPS chamber, and automated sample
handling. The exposure chamber has capabilities for plasma analysis, imaging ellipsometry for in-situ analysis of the
sample under radiation, photodiodes for power measurements and a scintillator disk for spot profiles. It is possible to
insert spectral purity filters and apertures in the beam line for wavelength tuning and beam shaping. The source is Sn
fueled DPP source made by our partner Ushio and is based on the proven technology from the ASML AD-tools,
providing a similar spectrum and pulse shape as used in the ASML NXE scanners. We show the results of first light
obtained in December 2016. The XPS is capable of handling and analyzing full reticles and data on the obtained surface
sensitivity and imaging quality will be shown.