13 July 2017 Application of advanced structure to multi-tone mask for FPD process
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Abstract
In accordance with improvement of FPD technology, masks such as phase shift mask (PSM) and multi-tone mask (MTM) for a particular purpose also have been developed. Above all, the MTM consisted of more than tri-tone transmittance has a substantial advantage which enables to reduce the number of mask demand in FPD fabrication process contrast to normal mask of two-tone transmittance.[1,2] A chromium (Cr)-based MTM (Typically top type) is being widely employed because of convenience of etch process caused by its only Cr-based structure consisted of Cr absorber layer and Cr half-tone layer. However, the top type of Cr-based MTM demands two Cr sputtering processes after each layer etching process and writing process. For this reason, a different material from the Cr-based MTM is required for reduction of mask fabrication time and cost. In this study, we evaluate a MTM which has a structure combined Cr with molybdenum silicide (MoSi) to resolve the issues mentioned above. The MoSi which is demonstrated by integrated circuit (IC) process is a suitable material for MTM evaluation. This structure could realize multi-transmittance in common with the Cr-based MTM. Moreover, it enables to reduce the number of sputtering process. We investigate a optimized structure upon consideration of productivity along with performance such as critical dimension (CD) variation and transmittance range of each structure. The transmittance is targeted at h-line wavelength (405 nm) in the evaluation. Compared with Cr-based MTM, the performances of all Cr-/MoSi-based MTMs are considered.
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Jin-Han Song, Jin-Han Song, Jin-Woong Jeong, Jin-Woong Jeong, Kyu-Sik Kim, Kyu-Sik Kim, Woo-Gun Jeong, Woo-Gun Jeong, Sang-Pil Yun, Sang-Pil Yun, Dong-Heok Lee, Dong-Heok Lee, Sang-Soo Choi, Sang-Soo Choi, } "Application of advanced structure to multi-tone mask for FPD process ", Proc. SPIE 10454, Photomask Japan 2017: XXIV Symposium on Photomask and Next-Generation Lithography Mask Technology, 104540Z (13 July 2017); doi: 10.1117/12.2278714; https://doi.org/10.1117/12.2278714
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