Exposure characteristics of positive tone electron beam resist containing p-chloro-α-methylstyrene

Shunsuke Ochiai; Tomohiro Takayama; Yukiko Kishimura; Hironori Asada; Manae Sonoda; Minako Iwakuma; Ryoichi Hoshino

doi:10.1117/12.2279079

13 July 2017 Exposure characteristics of positive tone electron beam resist containing p-chloro-α-methylstyrene

Shunsuke Ochiai, Tomohiro Takayama, Yukiko Kishimura, Hironori Asada, Manae Sonoda, Minako Iwakuma, Ryoichi Hoshino

Proceedings Volume 10454, Photomask Japan 2017: XXIV Symposium on Photomask and Next-Generation Lithography Mask Technology; 1045414 (2017) https://doi.org/10.1117/12.2279079
Event: Photomask Japan 2017, 2017, Yokohama, Japan

Abstract

The positive tone resist consisted of methyl-α-chloroacrylate (ACM) and α-methylstyrene (MS) has higher sensitivity and higher dry etching resistance than poly (methylmethacrylate) (PMMA) due to the presence of a chlorine atom and a phenyl group. Copolymers consisted of ACM and p-chloro-α-methylstyrene (PCMS), where the additional chlorine atom is introduced in phenyl group compared with ACM-MS resist are synthesized and their exposure characteristics are investigated. ACM-PCMS resist with the ACM:PCMS composition ratio of 49:51 indicates the high solubility for amyl acetate developer. As the ACM composition ratio increases, the solubility of ACM-PCMS resist is suppressed. In both ACM-PCMS and ACM-MS resists, the sensitivity decreases while the contrast increases with increasing ACM ratio. When the composition ratio of ACM:PCMS is 69:31, 100/100 nm line and space pattern having a good shape is obtained at 120 μC/cm² which is comparable to the required exposure dose for conventional ACM-MS resist with ACM:MS=50:50. Dry etching resistance of ACM:PCMS resists for Ar gas is also presented.

Citation Download Citation

Shunsuke Ochiai, Tomohiro Takayama, Yukiko Kishimura, Hironori Asada, Manae Sonoda, Minako Iwakuma, and Ryoichi Hoshino "Exposure characteristics of positive tone electron beam resist containing p-chloro-α-methylstyrene", Proc. SPIE 10454, Photomask Japan 2017: XXIV Symposium on Photomask and Next-Generation Lithography Mask Technology, 1045414 (13 July 2017); https://doi.org/10.1117/12.2279079

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available