1 September 2017 Raman and photoluminescence investigation of InAs/GaSb and InAs/InAsSb superlattices
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Proceedings Volume 10455, 12th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods; 1045507 (2017) https://doi.org/10.1117/12.2280729
Event: Twelfth Integrated Optics – Sensors, Sensing Structures and Methods Conference, 2017, Szczyrk-Gliwice, Poland
Abstract
In this work we compare two superlattices: InAs/GaSb (sample A) and InAs/InAsSb (sample B). Both samples were grown in MBE VIGO/ MUT laboratory on 2 inch (001) GaAs substrate using MBE technique. We characterized quality and thickness of the samples using three methods: photoluminescence, X-ray diffraction (XRD) and Raman scattering. Period of superlattice layers was obtained using Raman scattering and XRD measurements. For sample A it was equal 5.3 nm and 4.76 nm for InAs and GaSb layers respectively, for sample B 8.3 nm and 9.4 nm. Photoluminescence spectrum for sample A exhibits two peaks: band gap peak at 0.5 eV and deep state peak at 0.25 eV. Spectrum for sample B consists of one band gap peak at 0.17 eV.
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K. Murawski, K. Grodecki, A. Henig, K. Michalczewski, Ł. Kubiszyn, D. Benyahia, B. Jankiewicz, B. Budner, A. Wysmolek, P. Martyniuk, "Raman and photoluminescence investigation of InAs/GaSb and InAs/InAsSb superlattices", Proc. SPIE 10455, 12th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods, 1045507 (1 September 2017); doi: 10.1117/12.2280729; https://doi.org/10.1117/12.2280729
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