1 September 2017 Theoretical simulation of the long-wave HgCdTe detector for ultra fast response-operating under zero bias condition and room temperature
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Proceedings Volume 10455, 12th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods; 104550D (2017) https://doi.org/10.1117/12.2281405
Event: Twelfth Integrated Optics – Sensors, Sensing Structures and Methods Conference, 2017, Szczyrk-Gliwice, Poland
Abstract
The paper reports on the long-wave (λc = 8.05−11 μm) HgCdTe (Cd composition, xCd = 0.17−0.2) infrared detector for ultra short response time operating for unbiased condition and room temperature (300 K). The optimal structure in terms of the short response time versus device architecture was shown. The response time of the long-wave (xCd = 0.17−0.2) HgCdTe detector for 300 K was calculated at the level of τs ~ 400−440 ns for zero bias condition and lack of the extra series resistance. It was presented that extra series resistance related to the processing (in the range ~ 0−20 Ω) extends response time within the range τs ~ 650−800 ps for active layer xCd = 0.2.
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Piotr Martyniuk, Paweł Madejczyk, Jarosław Rutkowski, "Theoretical simulation of the long-wave HgCdTe detector for ultra fast response-operating under zero bias condition and room temperature", Proc. SPIE 10455, 12th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods, 104550D (1 September 2017); doi: 10.1117/12.2281405; https://doi.org/10.1117/12.2281405
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