1 September 2017 InAs/GaSb superlattice quality investigation
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Proceedings Volume 10455, 12th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods; 104550F (2017) https://doi.org/10.1117/12.2281774
Event: Twelfth Integrated Optics – Sensors, Sensing Structures and Methods Conference, 2017, Szczyrk-Gliwice, Poland
In this work we compare two InAs/GaSb superlattice samples grown in MBE VIGO/MUT laboratory on 2 inch (001) GaAs substrate, using MBE technique. Both samples have the same architecture, however their growth processes were conducted at different temperatures. For sample A the growth temperature was equal 668 K (395°C), for sample B 588 K (315°C). Photoluminescence measurements were performed at 30 K. For sample A there is no photoluminescence signal, while spectrum for sample B consists of two peaks: bandgap peak at 0.5 eV and deep state peak at 0.25 eV. X-ray diffraction (XRD) measurements indicate that sample A has better crystallographic quality than sample B. Raman spectra consists of low energy peaks (20-100 cm-1) which confirm the existence of superlattice for both samples [4]. Additionally, for sample A there are peaks related to Sb precipitates. It suggests that except the InAs/GaSb superlattice there is an additional Sb layer which may disturb band structure of superlattice and cause the disappearance of photoluminescence for sample A.
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Aleksandra Henig, Aleksandra Henig, Kacper Grodecki, Kacper Grodecki, Krzysztof Murawski, Krzysztof Murawski, Krystian Michalczewski, Krystian Michalczewski, Łukasz Kubiszyn, Łukasz Kubiszyn, Djalal Benyahia, Djalal Benyahia, Bartłomiej Jankiewicz, Bartłomiej Jankiewicz, Bogusław Budner, Bogusław Budner, Piotr Martyniuk, Piotr Martyniuk, "InAs/GaSb superlattice quality investigation", Proc. SPIE 10455, 12th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods, 104550F (1 September 2017); doi: 10.1117/12.2281774; https://doi.org/10.1117/12.2281774

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