1 September 2017 ZnO semiconductor for applications in optoelectronics sensors structures
Author Affiliations +
Proceedings Volume 10455, 12th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods; 104550K (2017) https://doi.org/10.1117/12.2282663
Event: Twelfth Integrated Optics – Sensors, Sensing Structures and Methods Conference, 2017, Szczyrk-Gliwice, Poland
Abstract
The paper presents numerical analysis of integrated optics structure in the form of planar waveguide based on polymer material (SU-8) with additional cover layer based on wide band gap oxide semiconductor – zinc oxide (ZnO). The theoretical studies of integrated optics structure presented in the paper was focused on determination of waveguide properties such as: modal field distribution and effective refractive index Neff as a function of optical and geometrical properties of waveguide and cover layer. The theoretical studies presented in the paper was carried out for two type of planar waveguide structure: without additional cover layer and with additional cover layer based on ZnO. The second part of the paper presents experimental results focused on technology of a single mode planar waveguide based on SU-8 polymer.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Przemyslaw Struk, Tadeusz Pustelny, "ZnO semiconductor for applications in optoelectronics sensors structures ", Proc. SPIE 10455, 12th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods, 104550K (1 September 2017); doi: 10.1117/12.2282663; https://doi.org/10.1117/12.2282663
PROCEEDINGS
5 PAGES


SHARE
Back to Top