1 September 2017 ZnO semiconductor for applications in optoelectronics sensors structures
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Proceedings Volume 10455, 12th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods; 104550K (2017) https://doi.org/10.1117/12.2282663
Event: Twelfth Integrated Optics – Sensors, Sensing Structures and Methods Conference, 2017, Szczyrk-Gliwice, Poland
Abstract
The paper presents numerical analysis of integrated optics structure in the form of planar waveguide based on polymer material (SU-8) with additional cover layer based on wide band gap oxide semiconductor – zinc oxide (ZnO). The theoretical studies of integrated optics structure presented in the paper was focused on determination of waveguide properties such as: modal field distribution and effective refractive index Neff as a function of optical and geometrical properties of waveguide and cover layer. The theoretical studies presented in the paper was carried out for two type of planar waveguide structure: without additional cover layer and with additional cover layer based on ZnO. The second part of the paper presents experimental results focused on technology of a single mode planar waveguide based on SU-8 polymer.
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Przemyslaw Struk, Przemyslaw Struk, Tadeusz Pustelny, Tadeusz Pustelny, } "ZnO semiconductor for applications in optoelectronics sensors structures ", Proc. SPIE 10455, 12th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods, 104550K (1 September 2017); doi: 10.1117/12.2282663; https://doi.org/10.1117/12.2282663
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