1 September 2017 Mobility spectrum analysis of HgCdTe epitaxial layers grown by metalorganic chemical vapour deposition
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Proceedings Volume 10455, 12th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods; 104550T (2017) https://doi.org/10.1117/12.2282836
Event: Twelfth Integrated Optics – Sensors, Sensing Structures and Methods Conference, 2017, Szczyrk-Gliwice, Poland
Abstract
The preliminary results of quantitative mobility spectrum analysis of highly iodine-doped Hg0,685Cd0,315Te and arsenicdoped Hg0,827Cd0,173Te for the 5 – 300 K temperature range have been presented. Electron mobilities for the samples made by metalorganic chemical vapor deposition technique have been compared with the available literature data.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jarosław Wróbel, Jarosław Wróbel, Kinga Gorczyca, Kinga Gorczyca, Gilberto A. Umana-Membreno, Gilberto A. Umana-Membreno, Artur Kębłowski, Artur Kębłowski, Jacek Boguski, Jacek Boguski, Piotr Martyniuk, Piotr Martyniuk, Paweł Madejczyk, Paweł Madejczyk, } "Mobility spectrum analysis of HgCdTe epitaxial layers grown by metalorganic chemical vapour deposition", Proc. SPIE 10455, 12th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods, 104550T (1 September 2017); doi: 10.1117/12.2282836; https://doi.org/10.1117/12.2282836
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