24 October 2017 Measurements of loss and gain of optically pumped InGaAs semiconductor lasers based on the photoluminescence spectra from dual facets
Author Affiliations +
Proceedings Volume 10457, AOPC 2017: Laser Components, Systems, and Applications; 1045710 (2017) https://doi.org/10.1117/12.2283349
Event: Applied Optics and Photonics China (AOPC2017), 2017, Beijing, China
Abstract
In this paper, the loss and gain characteristics of optically-pumped InGaAs/GaAs quantum well lasers are measured based on the photoluminescence spectra from dual facets of a single laser device. The device is pumped by 808nm fiber coupled semiconductor lasers controlled with pulsing signal and beam shaping system to reduce the thermal effect. The result of loss spectra is consistent with gain spectra well. In addition, the special double-peak configuration in the loss and gain spectra is observed and analyzed, in term of the strain mechanism and band structure of InGaAs quantum well. The results will be very helpful to the study and design of the InGaAs semiconductor lasers
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Y. Jia, Y. Jia, Q.-N. Yu, Q.-N. Yu, W. Lu, W. Lu, J. Zhang, J. Zhang, X. Zhang, X. Zhang, Y.-Q. Ning, Y.-Q. Ning, J. Wu, J. Wu, } "Measurements of loss and gain of optically pumped InGaAs semiconductor lasers based on the photoluminescence spectra from dual facets", Proc. SPIE 10457, AOPC 2017: Laser Components, Systems, and Applications, 1045710 (24 October 2017); doi: 10.1117/12.2283349; https://doi.org/10.1117/12.2283349
PROCEEDINGS
6 PAGES


SHARE
Back to Top