24 October 2017 Photoresponse and photo-induced memory effect in the organic field-effect transistor based on AlOX nanoparticles at the interface of semiconductor/dielectric
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Proceedings Volume 10460, AOPC 2017: Optoelectronics and Micro/Nano-Optics; 104600F (2017) https://doi.org/10.1117/12.2283021
Event: Applied Optics and Photonics China (AOPC2017), 2017, Beijing, China
Abstract
In this work, the photoresponse and photo-induced memory effect were demonstrated in an organic field-effect transistor (OFET) with semiconductor pentacene and SiO2 as the active and gate dielectric layers, respectively. By inserting AlOX nanoparticles (NPs) at the interface of pentacene/SiO2, obvious enhancing photoresponse was obtained in the OFET with the maximum responsivity and photosensitivity of about 15 A/W and 100, respectively. Moreover, the stable photoinduced memory effect was achieved in the OFET, attributing to the photogenerated electrons captured by the interface traps of the AlOX NPs/SiO2.
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Yunfei Cheng, Yunfei Cheng, Wu Wang, Wu Wang, } "Photoresponse and photo-induced memory effect in the organic field-effect transistor based on AlOX nanoparticles at the interface of semiconductor/dielectric", Proc. SPIE 10460, AOPC 2017: Optoelectronics and Micro/Nano-Optics, 104600F (24 October 2017); doi: 10.1117/12.2283021; https://doi.org/10.1117/12.2283021
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