24 October 2017 PbS quantum dot-graphene hybrid phototransistor
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Proceedings Volume 10460, AOPC 2017: Optoelectronics and Micro/Nano-Optics; 1046013 (2017) https://doi.org/10.1117/12.2284464
Event: Applied Optics and Photonics China (AOPC2017), 2017, Beijing, China
Ultrasensitive near-infrared phototransistors based on Lead sulfide (PbS) quantum dots (QDs)-graphene hybrid channel are fabricated by facile solution processing. The device combines the advantages of the large light absorbance of QDs high mobility of graphene. Under light illumination, the photogenerated carriers will transfer from QDs to graphene. As result, the phototransistor exhibits fast response speed with rise time of 1.4 ms and fall time of 1.3 ms at 36 mW/cm2 illumination of 808 nm wavelength, meaning the device can follow a fast switched optical signal. The responsivity (R), effective quantum efficiency (EQE) of the device are 6 A/W and 961% under 166mW/cm2 illumination, respectively. It expected that the PbS QDs–graphene hybrid devices are promising for fast response, low-cost and easy fabrication photoelectronics
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yongli Che, Yongli Che, Yating Zhang, Yating Zhang, Xiaolong Cao, Xiaolong Cao, Haiting Zhang, Haiting Zhang, Xiaoxian Song, Xiaoxian Song, Mingxuan Cao, Mingxuan Cao, Yu Yu, Yu Yu, Heng Zhang, Heng Zhang, Guizhong Zhang, Guizhong Zhang, Jianquan Yao, Jianquan Yao, } "PbS quantum dot-graphene hybrid phototransistor", Proc. SPIE 10460, AOPC 2017: Optoelectronics and Micro/Nano-Optics, 1046013 (24 October 2017); doi: 10.1117/12.2284464; https://doi.org/10.1117/12.2284464

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