24 October 2017 Retrieve polarization aberration from image degradation: a new measurement method in DUV lithography
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Proceedings Volume 10460, AOPC 2017: Optoelectronics and Micro/Nano-Optics; 104601W (2017) https://doi.org/10.1117/12.2285799
Event: Applied Optics and Photonics China (AOPC2017), 2017, Beijing, China
Abstract
Detailed knowledge of polarization aberration (PA) of projection lens in higher-NA DUV lithographic imaging is necessary due to its impact to imaging degradations, and precise measurement of PA is conductive to computational lithography techniques such as RET and OPC. Current in situ measurement method of PA thorough the detection of degradations of aerial images need to do linear approximation and apply the assumption of 3-beam/2-beam interference condition. The former approximation neglects the coupling effect of the PA coefficients, which would significantly influence the accuracy of PA retrieving. The latter assumption restricts the feasible pitch of test masks in higher-NA system, conflicts with the Kirhhoff diffraction model of test mask used in retrieving model, and introduces 3D mask effect as a source of retrieving error. In this paper, a new in situ measurement method of PA is proposed. It establishes the analytical quadratic relation between the PA coefficients and the degradations of aerial images of one-dimensional dense lines in coherent illumination through vector aerial imaging, which does not rely on the assumption of 3-beam/2- beam interference and linear approximation. In this case, the retrieval of PA from image degradation can be convert from the nonlinear system of m-quadratic equations to a multi-objective quadratic optimization problem, and finally be solved by nonlinear least square method. Some preliminary simulation results are given to demonstrate the correctness and accuracy of the new PA retrieving model.
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Zhongbo Xiang, Yanqiu Li, "Retrieve polarization aberration from image degradation: a new measurement method in DUV lithography", Proc. SPIE 10460, AOPC 2017: Optoelectronics and Micro/Nano-Optics, 104601W (24 October 2017); doi: 10.1117/12.2285799; https://doi.org/10.1117/12.2285799
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