24 October 2017 Modeling and optimization of InGaAs photodetectors
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Proceedings Volume 10462, AOPC 2017: Optical Sensing and Imaging Technology and Applications; 104623G (2017) https://doi.org/10.1117/12.2285162
Event: Applied Optics and Photonics China (AOPC2017), 2017, Beijing, China
Abstract
The modeling and optimization of several photodetectors by semiconductor simulation tool Silvaco Atlas are reported. First is the simulations of p-i-n InP/In0.53Ga0.47As/InP photodetector at low bias. How the dark current, photoresponse and the transient response are influenced by the doping concentration and thickness of the absorption layer are reported. Second is a two-terminal p-n-p heterojunction phototransistors (2T-HPTs) based on In0.53Ga0.47As/InP. To optimize the device performance, the adjustment of the doping level, width, and compositional grading of base, the effects of high-low doping in collector region and the insertion of a thin undoped InGaAs layer in the base region have been investigated. The last is a simulation for InGaAs/InAlAs separate absorption, grading, charge, and multiplication avalanche photodetectors (SAGCM APDs), study the effect of multiplication layer parameters on the operating voltage ranges of APD.
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Yi Jiang, Zhengyu Zhang, Jun Chen, "Modeling and optimization of InGaAs photodetectors", Proc. SPIE 10462, AOPC 2017: Optical Sensing and Imaging Technology and Applications, 104623G (24 October 2017); doi: 10.1117/12.2285162; https://doi.org/10.1117/12.2285162
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