24 October 2017 Imaging performance comparison of novel CMOS low-light-level image sensor and electron multiplying CCD sensor
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Proceedings Volume 10462, AOPC 2017: Optical Sensing and Imaging Technology and Applications; 104623X (2017) https://doi.org/10.1117/12.2285297
Event: Applied Optics and Photonics China (AOPC2017), 2017, Beijing, China
Abstract
Due to its advantages on the cost, power and size, the study of the CMOS image sensor is considered as an important direction of the development of low-light-level image sensor. However, the sensitivity of current CMOS image sensor does not satisfy the low-light-level application requirements. This paper introduces several key techniques on how to improve the sensitivity of CMOS image sensors. We introduce a novel CMOS low-light-level image sensor based on Geiger mode avalanche photodiode (GM-APD) and digital TDI technology. Noise characteristics and complete signal-tonoise ratio(SNR) theoretical models are constructed for both sensors. A comparison of SNR performance of two image sensors is also done by numerical simulation in this paper. The results show that the novel CMOS low-light-level image sensor outperforms EMCCD at the very low light level.
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Song Yang, Xuxia Zhuang, Fang Xue, Qian Sun, Ningjuan Ruan, "Imaging performance comparison of novel CMOS low-light-level image sensor and electron multiplying CCD sensor", Proc. SPIE 10462, AOPC 2017: Optical Sensing and Imaging Technology and Applications, 104623X (24 October 2017); doi: 10.1117/12.2285297; https://doi.org/10.1117/12.2285297
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