24 October 2017 Linear-mode linear arrays 16 pixel silicon avalanche photodiodes with high gain and low noise readout
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Proceedings Volume 10462, AOPC 2017: Optical Sensing and Imaging Technology and Applications; 104625E (2017) https://doi.org/10.1117/12.2285820
Event: Applied Optics and Photonics China (AOPC2017), 2017, Beijing, China
Abstract
A hybrid integrated photodetector consisting of array of reach-through avalanche photodiodes and readout integrated circuit chips was developed. The reach-through avalanche photodiode model with separate layer of absorption, charge and multiplication are elaborated. This kind of photodiode is optimized for detection of 905 nm radiation and in that range achieve excellent parameters – high gain, low noise and high speed. Next, the design and properties of the readout integrated circuit with a new-type regulated cascode circuit configuration are discussed. The linear array reach-through avalanche photodiode and readout integrated circuit chips were integrated into a photodetector by using bonder-leading welding techniques. The integrated detector demonstrates the pulse responsivity R ≥ 1×106 V/W, the noise equivalent power NEP ≤ 5 pW/Hz1/2, and the rise time tr ≤ 3 ns, under pulsed laser irradiation at 905 nm, 100 ns and 10 KHz.
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Jian Chen, Jian Chen, Yunxiu Yang, Yunxiu Yang, Changdong Guo, Changdong Guo, Fanlin Kong, Fanlin Kong, Xianguo Kou, Xianguo Kou, Ou Wang, Ou Wang, Libo Yu, Libo Yu, Haizhi Song, Haizhi Song, } "Linear-mode linear arrays 16 pixel silicon avalanche photodiodes with high gain and low noise readout ", Proc. SPIE 10462, AOPC 2017: Optical Sensing and Imaging Technology and Applications, 104625E (24 October 2017); doi: 10.1117/12.2285820; https://doi.org/10.1117/12.2285820
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