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15 February 2018 Tm:GdVO4 microchip laser Q-switched by a Sb2Te3 topological insulator
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Abstract
We report on the first application of a topological insulator based on antimony telluride (Sb2Te3) as a saturable absorber (SA) in a bulk microchip laser. The transmission-type SA consisted of a thin film of Sb2Te3 (thickness: 3 nm) deposited on a glass substrate by pulsed magnetron sputtering. The saturable absorption of the Sb2Te3 film was confirmed for ns-long pulses. The microchip laser was based on a Tm:GdVO4 crystal diode-pumped at ∼802 nm. In the continuous-wave regime, this laser generated 3.54 W at 1905-1921 nm with a slope efficiency η of 37%. The Q-switched laser generated a maximum average output power of 0.70 W at 1913 nm. The pulse energy and duration were 3.5 μJ and 223 ns, respectively, at a repetition rate of 200 kHz. The Sb2Te3 SAs are promising for passively Q-switched waveguide lasers at ∼2 μm.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pavel Loiko, Jakub Bogusławski, Josep Maria Serres, Esrom Kifle, Maciej Kowalczyk, Xavier Mateos, Jarosław Sotor, Rafał Zybała, Krzysztof Mars, Andrzej Mikuła, Magdalena Aguiló, Francesc Díaz, Uwe Griebner, and Valentin Petrov "Tm:GdVO4 microchip laser Q-switched by a Sb2Te3 topological insulator", Proc. SPIE 10511, Solid State Lasers XXVII: Technology and Devices, 105110B (15 February 2018); https://doi.org/10.1117/12.2291132
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