19 February 2018 Recent progress of 638-nm high-power broad area laser diodes in Mitsubishi Electric
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Proceedings Volume 10514, High-Power Diode Laser Technology XVI; 1051404 (2018) https://doi.org/10.1117/12.2287628
Event: SPIE LASE, 2018, San Francisco, California, United States
Laser based displays have gathered much attention because only the displays can express full color gamut of Ultra-HDTV, ITU-R BT.2020. One of the displays uses the lasers under pulse such as a single spatial light modulator (SLM) projector, and the other does ones under CW such as a multiple SLM projector and a liquid crystal display. Both types require high-power lasers because brightness is the most important factor in the market. We developed two types of 638-nm multi-emitter high-power BA-LDs assembled on Φ9.0-TO, that is, triple emitter for pulse and dual emitter for CW. The triple emitter LD emitted exceeding 6.0 W peak power under 25°C, frequency of 120 Hz, and duty of 30%. At high temperature, 55°C, the peak power was approximately 2.9W. The dual emitter emitted exceeding 3.0W under 25°C, CW. It emitted up to 1.7 W at 55°C. WPE of the dual emitter reached 40.5% at Tc of 25°C, which is the world highest in 638-nm LD under CW to the best of our knowledge, although that of the triple emitter was 38.1%. Both LDs may be suitable for laser based display applications.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kyosuke Kuramoto, Kyosuke Kuramoto, Shinji Abe, Shinji Abe, Motoharu Miyashita, Motoharu Miyashita, Takehiro Nishida, Takehiro Nishida, Tetsuya Yagi, Tetsuya Yagi, } "Recent progress of 638-nm high-power broad area laser diodes in Mitsubishi Electric", Proc. SPIE 10514, High-Power Diode Laser Technology XVI, 1051404 (19 February 2018); doi: 10.1117/12.2287628; https://doi.org/10.1117/12.2287628


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