19 February 2018 Recent progress of 638-nm high-power broad area laser diodes in Mitsubishi Electric
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Proceedings Volume 10514, High-Power Diode Laser Technology XVI; 1051404 (2018) https://doi.org/10.1117/12.2287628
Event: SPIE LASE, 2018, San Francisco, California, United States
Abstract
Laser based displays have gathered much attention because only the displays can express full color gamut of Ultra-HDTV, ITU-R BT.2020. One of the displays uses the lasers under pulse such as a single spatial light modulator (SLM) projector, and the other does ones under CW such as a multiple SLM projector and a liquid crystal display. Both types require high-power lasers because brightness is the most important factor in the market. We developed two types of 638-nm multi-emitter high-power BA-LDs assembled on Φ9.0-TO, that is, triple emitter for pulse and dual emitter for CW. The triple emitter LD emitted exceeding 6.0 W peak power under 25°C, frequency of 120 Hz, and duty of 30%. At high temperature, 55°C, the peak power was approximately 2.9W. The dual emitter emitted exceeding 3.0W under 25°C, CW. It emitted up to 1.7 W at 55°C. WPE of the dual emitter reached 40.5% at Tc of 25°C, which is the world highest in 638-nm LD under CW to the best of our knowledge, although that of the triple emitter was 38.1%. Both LDs may be suitable for laser based display applications.
Conference Presentation
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Kyosuke Kuramoto, Kyosuke Kuramoto, Shinji Abe, Shinji Abe, Motoharu Miyashita, Motoharu Miyashita, Takehiro Nishida, Takehiro Nishida, Tetsuya Yagi, Tetsuya Yagi, } "Recent progress of 638-nm high-power broad area laser diodes in Mitsubishi Electric", Proc. SPIE 10514, High-Power Diode Laser Technology XVI, 1051404 (19 February 2018); doi: 10.1117/12.2287628; https://doi.org/10.1117/12.2287628
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