19 February 2018 Next generation DIRCM for 2.1-2.3 micron wavelength based on direct-diode GaSb technology
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Proceedings Volume 10514, High-Power Diode Laser Technology XVI; 1051405 (2018) https://doi.org/10.1117/12.2289425
Event: SPIE LASE, 2018, San Francisco, California, United States
Abstract
Continuous advances in low-cost MANPAD heat-seeking missile technology over the past 50 years remains the number one hostile threat to airborne platforms globally responsible for over 60 % of casualties. Laser based directional countermeasure (DIRCM) technology have been deployed to counter the threat. Ideally, a laser based DIRCM system must involve a number of lasers emitting at different spectral bands mimicking the spectral signature of the airborne platform. Up to now, near and mid infrared spectral bands have been covered with semiconductor laser technology and only SWIR band remained with bulky fiber laser technology. Recent technology developments on direct-diode GaSb laser technology at Brolis Semiconductors offer a replacement for the fiber laser source leading to significant improvements by few orders of magnitude in weight, footprint, efficiency and cost. We demonstrate that with careful engineering, several multimode emitters can be combined to provide a directional laser beam with radiant intensity from 10 kW/sr to 60 kW/sr in an ultra-compact hermetic package with weight < 30 g and overall efficiency of 15 % in the 2.1- 2.3 micron spectral band offering 150 times improvement in efficiency and reduction in footprint. We will discuss present results, challenges and future developments for such next-generation integrated direct diode DIRCM modules for SWIR band.
Conference Presentation
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Edgaras Dvinelis, Greta Naujokaitė, Mindaugas Greibus, Augustinas Trinkūnas, Kristijonas Vizbaras, Augustinas Vizbaras, "Next generation DIRCM for 2.1-2.3 micron wavelength based on direct-diode GaSb technology", Proc. SPIE 10514, High-Power Diode Laser Technology XVI, 1051405 (19 February 2018); doi: 10.1117/12.2289425; https://doi.org/10.1117/12.2289425
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