7 May 2018 Forward development of kW-class power diode laser bars
Author Affiliations +
Proceedings Volume 10514, High-Power Diode Laser Technology XVI; 1051409 (2018) https://doi.org/10.1117/12.2290382
Event: SPIE LASE, 2018, San Francisco, California, United States
Abstract
Progress is presented on ongoing research and development into ultra-high power and efficiency bars that achieve significantly higher useful optical output power and higher brightness than are currently commercially available. In previous work (2017), the authors reported on bars that deliver over 1 kW continuous wave (cw) diode laser power, when cooled using 15°C water. Our current studies are focused on increasing the usable output power (power within a targeted beam angle), which is essential for real world industrial applications. These ongoing studies have enabled the first demonstration of 500 W cw output power from a 10 mm x 6 mm laser diode bar with a lateral far field angle of only 8°. In efforts to further improve brightness, we also present our latest progress on high power SMEBs (Single Mode Emitter Bars). These emitters operate in a close to diffraction limited optical mode (M² < 1.5, laterally and vertically). This new technology enables a significant increase in Diode Laser brightness. We demonstrate in excess of 55% electro optical efficiency at > 200 W cw laser bar power for SMEBs.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. G. Strohmaier, S. G. Strohmaier, G. Erbert, G. Erbert, T. Rataj, T. Rataj, A. H. Meissner-Schenk, A. H. Meissner-Schenk, V. Loyo-Maldonado, V. Loyo-Maldonado, C. Carstens, C. Carstens, H. Zimer, H. Zimer, B. Schmidt, B. Schmidt, T. Kaul, T. Kaul, M. M. Karow, M. M. Karow, M. Wilkens, M. Wilkens, P. Crump, P. Crump, } "Forward development of kW-class power diode laser bars", Proc. SPIE 10514, High-Power Diode Laser Technology XVI, 1051409 (7 May 2018); doi: 10.1117/12.2290382; https://doi.org/10.1117/12.2290382
PROCEEDINGS
6 PAGES


SHARE
RELATED CONTENT

High power diode lasers emitting from 639 nm to 690...
Proceedings of SPIE (March 06 2014)
High Power Semiconductor Lasers
Proceedings of SPIE (January 13 1987)
Highly reliable high power AlGaAs GaAs 808 nm diode laser...
Proceedings of SPIE (February 18 2007)
High Power Diode Laser Research In Mitsubishi Electric
Proceedings of SPIE (August 08 1988)
Newly developed high-power laser diode bars
Proceedings of SPIE (February 08 2012)
High brightness high power 9xx nm diode laser bars ...
Proceedings of SPIE (February 11 2007)

Back to Top