27 February 2018 Numerical analysis of high-power broad-area laser diode with improved heat sinking structure using epitaxial liftoff technique
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Proceedings Volume 10514, High-Power Diode Laser Technology XVI; 105140C (2018) https://doi.org/10.1117/12.2288639
Event: SPIE LASE, 2018, San Francisco, California, United States
Abstract
The characteristics of high-power broad-area laser diodes with the improved heat sinking structure are numerically analyzed by a technology computer-aided design based self-consistent electro-thermal-optical simulation. The high-power laser diodes consist of a separate confinement heterostructure of a compressively strained InGaAsP quantum well and GaInP optical cavity layers, and a 100-μm-wide rib and a 2000-μm long cavity. In order to overcome the performance deteriorations of high-power laser diodes caused by self-heating such as thermal rollover and thermal blooming, we propose the high-power broad-area laser diode with improved heat-sinking structure, which another effective heat-sinking path toward the substrate side is added by removing a bulk substrate. It is possible to obtain by removing a 400-μm-thick GaAs substrate with an AlAs sacrificial layer utilizing well-known epitaxial liftoff techniques. In this study, we present the performance improvement of the high-power laser diode with the heat-sinking structure by suppressing thermal effects. It is found that the lateral far-field angle as well as quantum well temperature is expected to be improved by the proposed heat-sinking structure which is required for high beam quality and optical output power, respectively.
Conference Presentation
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Younghyun Kim, Yunsu Sung, Jung-Tack Yang, Woo-Young Choi, "Numerical analysis of high-power broad-area laser diode with improved heat sinking structure using epitaxial liftoff technique", Proc. SPIE 10514, High-Power Diode Laser Technology XVI, 105140C (27 February 2018); doi: 10.1117/12.2288639; https://doi.org/10.1117/12.2288639
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